| PART |
Description |
Maker |
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SB1237 2SA1515S 2SA1515S10 |
Medium Power Transistor (-32V,-1A)
|
Rohm
|
| 2SA1577 |
Medium Power Transistor (-32V, -05A)
|
Rohm
|
| L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管（32V的，0.8A
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
| 2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
From old datasheet system
Low Frequency Transistor(-32V, -0.8A)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| WPT2N40-8TR |
PNP, -32V, -1A, Power Transistor with 20V N-MOSFET
|
TY Semiconductor Co., Ltd
|
| 2SD2143 2SD1866 2SD2397 |
Medium Power Transistor(Motor, Relay drive) (600V, 2A) 中等功率晶体管（电机，继电器驱动器）600V2A号）
Medium Power Transistor(Motor/ Relay drive) (6010V/ 2A)
Medium Power Transistor(Motor, Relay drive) (60?0V, 2A)
Medium Power Transistor(Motor, Relay drive) (6010V, 2A)
|
Rohm Co., Ltd.
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 500mA的一（c）|
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 200mA的我（丙
|
Electronic Theatre Controls, Inc.
IDEC, Corp.
|
